Diagnostics of Homogeneity of Individual Layers of Large-Area Silicon Solar Cells Using Local Irradiation

This paper deals with the possibility of checking the recombination rate distribution over the area of power (large-area) solar cells from measured values of open circuit voltage V_OC using local irradiation by monochromatic light of different wavelengths (LBIV-light beam initiated voltage). This method can provide information both about the distribution of the recombination centres in large-area solar cells and the surface recombination rate at the antireflection coating. From the V_OC distribution, also position and extent of local defects can also be determined. The method can be used to investigate the influence of technology on characteristics of solar cells as an in-process checking with the aim of increasing efficiency and reliability of solar cells