• DocumentCode
    3622156
  • Title

    Investigation of the Ion Defect States by Photoacoustic Spectroscopy

  • Author

    D.M. Todorovic;V. Jovic;M. Smiljanic;T. Grozdic

  • Author_Institution
    Center for Multidisciplinary Studies, Belgrade Univ.
  • fYear
    2006
  • fDate
    6/28/1905 12:00:00 AM
  • Firstpage
    572
  • Lastpage
    575
  • Abstract
    The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the ion-defect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energy-dependent distribution of interface states in SiO2-Si system with different concentration of Na-ions
  • Keywords
    "Spectroscopy","Optical modulation","Oxidation","Optical films","Semiconductor impurities","Optical beams","Semiconductor materials","Absorption","Plasma waves","Acoustic waves"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006 25th International Conference on
  • Print_ISBN
    1-4244-0117-8
  • Type

    conf

  • DOI
    10.1109/ICMEL.2006.1651031
  • Filename
    1651031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3622156