DocumentCode :
3622794
Title :
Finding DC operating points of transistor circuits using homotopy methods
Author :
L. Trajkovic;R.C. Melville;S.-C. Fang
Author_Institution :
Bellcore Morristown, NJ, USA
fYear :
1991
fDate :
6/13/1905 12:00:00 AM
Firstpage :
758
Abstract :
Finding the DC operating points of transistor circuits is one of the most important tasks in electrical circuit simulation. To resolve DC convergence difficulties that often arise when simulating bipolar and MOS transistor circuits, the authors use homotopy methods to solve nonlinear circuit equations. The authors exploit the properties of the equations and construct various homotopies that prove useful in finding their solutions. Criteria are provided for choosing homotopy parameters and a good starting point for homotopy paths. Homotopy methods are robust, accurate, and capable of finding multiple operating points. The authors present a circuit that could not be simulated using techniques available in current circuit simulators, while the solutions were successfully obtained using homotopy methods.
Keywords :
"Nonlinear equations","Circuit simulation","Convergence","MOSFETs","Nonlinear circuits","Robustness","Land surface temperature","Conductors","Software algorithms","Software packages"
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
Type :
conf
DOI :
10.1109/ISCAS.1991.176473
Filename :
176473
Link To Document :
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