• DocumentCode
    3623214
  • Title

    Single event gate rupture in commercial power MOSFETs

  • Author

    D.K. Nichols;J.R. Coss;K.P. McCarty

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1993
  • Firstpage
    462
  • Lastpage
    467
  • Abstract
    Several types of power MOSFETs were irradiated with heavy ions to characterize either single event gate rupture (SEGR) or single event burnout (SEB). The implications of the data, showing temperature-dependence and beam angle-dependence for SEGR, are indicated.
  • Keywords
    "MOSFETs","Testing","Laboratories","FETs","Propulsion","Cyclotrons","Threshold voltage","Iron","Argon","Temperature"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
  • Print_ISBN
    0-7803-1793-9
  • Type

    conf

  • DOI
    10.1109/RADECS.1993.316559
  • Filename
    316559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3623214