DocumentCode
3623281
Title
Optically-pumped all-epitaxial wafer-fused 1.52-/spl mu/m vertical-cavity lasers
Author
D.I. Babic;J.J. Dudley;K. Streubel;R.P. Mirin;E.L. Hu;J.E. Bowers
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1994
Firstpage
319
Lastpage
322
Abstract
We demonstrate for the first time the operation of all-epitaxial vertical cavity lasers operating at 1.52 /spl mu/m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique. The active region is a bulk 1.55 /spl mu/m InGaAsP layer of thickness 2/spl lambda/. Multiple transverse mode laser operation with equidistant mode separations of 1 nm was observed. The laser structure operated at heat sink temperatures as high as 35/spl deg/C.
Keywords
"Laser fusion","Laser modes","Pump lasers","Optical pumping","Mirrors","Wafer bonding","Indium phosphide","Gallium arsenide","Heat sinks","Temperature"
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328234
Filename
328234
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