• DocumentCode
    3623284
  • Title

    Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces

  • Author

    I-Hsing Tan;C. Reaves;J.J. Dudley;A.L. Holmes;D.I. Babic;E.L. Hu;J.E. Bowers;S. DenBaars

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1994
  • Firstpage
    628
  • Lastpage
    631
  • Abstract
    We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.
  • Keywords
    "Bonding","Indium phosphide","Optical materials","Gallium arsenide","Optical microscopy","Solid state circuits","Ohmic contacts","Scanning electron microscopy","Electron optics","Reflectivity"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328311
  • Filename
    328311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3623284