DocumentCode :
36234
Title :
ZnO Branched Nanowires and the p-CuO/n-ZnO Heterojunction Nanostructured Photodetector
Author :
Sheng-Bo Wang ; Chih-Hung Hsiao ; Shoou-Jinn Chang ; Jiao, Z.Y. ; Sheng-Joue Young ; Shang-Chao Hung ; Bohr-Ran Huang
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
12
Issue :
2
fYear :
2013
fDate :
Mar-13
Firstpage :
263
Lastpage :
269
Abstract :
The authors report the growth of ZnO branched nanowires on the CuO nanowires and the fabrication of p-CuO/n-ZnO heterojunction nanostructured photodetector (PD). It was found that the hydrothermally grown ZnO branched nanowires were reasonably uniform with an average length of 200 nm and an average diameter of 50 nm. Under forward bias, it was found that turn on voltage of the fabricated PD reduced from ~0.7 to ~0.2 V under ultraviolet (UV) illumination. It was also found that UV-to-visible rejection ratio of the fabricated device was larger than 100.
Keywords :
II-VI semiconductors; copper compounds; nanofabrication; nanowires; photodetectors; semiconductor growth; semiconductor heterojunctions; ultraviolet detectors; wide band gap semiconductors; zinc compounds; CuO-ZnO; UV-visible rejection ratio; ZnO; forward bias; heterojunction nanostructured photodetector; hydrothermal grown branched nanowires; size 200 nm; size 50 nm; ultraviolet illumination; Current measurement; Fabrication; Lighting; Nanowires; Temperature measurement; Wavelength measurement; Zinc oxide; Branched nanowires; CuO; ZnO; heterojunction; photodetector (PD);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2243916
Filename :
6423930
Link To Document :
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