• DocumentCode
    3624066
  • Title

    Phase Change Memory Reliability

  • Author

    Su Jin Ahn

  • Author_Institution
    Samsung
  • fYear
    2006
  • Firstpage
    216
  • Lastpage
    216
  • Keywords
    "Phase change memory","Phase change random access memory","Phase change materials","Degradation","Robustness","Nonvolatile memory"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    2374-8036
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305252
  • Filename
    4098729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624066