Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Unified transient and frequency domain noise simulation of random telegraph noise and flicker noise is conducted using a multiphonon-assisted model that considers tunneling probabilities and energy transitions of discretized traps in the gate insulator of MOSFETs. The proposed model is able to concurrently represent the dynamic behavior of electron and hole trapping and detrapping via interactions with both the Si substrate and Poly-Si gate. The model is implemented in a 3-D device simulator to examine the effect of device structure and bias conditions. The conventional analytical model does not precisely estimate the noise powers in short-channel MOSFETs due to the nonuniform trapped charge effect. The high trap density near the shallow trap isolation edges is predicted quantitatively by comparing the measured data with the simulated data. In conclusion, we confirm the validity of the developed unified simulator and its usefulness for gaining insights into trap sites and noise reduction engineering.