• DocumentCode
    3624479
  • Title

    Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack

  • Author

    K. Frohlich;J. P. Espinos;M. Tapajna;K. Husekova;R. Luptak

  • Author_Institution
    Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? 9, 841 04 Bratislava, Slovak Republic. e-mail: karol.frohlich@savba.sk
  • fYear
    2006
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    The authors have studied advanced MOS structure containing Ru gate electrode, Hf0.75Si0.25Oy dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf0.75Si0.25/Si gate stack
  • Keywords
    "Dielectric substrates","Electrodes","Capacitance-voltage characteristics","MOSFET circuits","Leakage current","Optical films","Electrons","High-K gate dielectrics","Reflection","Energy loss"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331146
  • Filename
    4133070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624479