• DocumentCode
    3624480
  • Title

    The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate

  • Author

    L´. Stuchlikova;L. Harmatha;M. Tapajna;P. Ballo;P. Pisecny;M. Benkovic;J. Jakabovic

  • Author_Institution
    Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic. e-mail: lubica.stuchlikova@stuba.sk
  • fYear
    2006
  • Firstpage
    43
  • Lastpage
    46
  • Abstract
    Nitrogen introduced into a silicon substrate by the Czochralski method brought about an increase in the density of Si-SiO2 interface traps and in the density of electrically active defects in Si by an enhanced nucleation of oxygen precipitates. Rapid thermal annealing above 800degC led to decomposition of NxOy clusters in the vicinity of the Si-SiO2 interface and to an increase of the width of the denuded zone
  • Keywords
    "Rapid thermal annealing","Oxygen","Nitrogen","Silicon","Capacitance measurement","Capacitance-voltage characteristics","Gettering","Charge carriers","Energy measurement","Spectroscopy"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331149
  • Filename
    4133073
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624480