DocumentCode
3624483
Title
Influence of mechanical strain on essential characteristics of GMR structures
Author
V. Ac;B. Anwarzai;S. Luby;E. Majkova
Author_Institution
A. Dub?ek University of Tren??n, ?tudentsk? 1, 91151 Tren??n, Slovak Republic. e-mail: vac@tnuni.sk
fYear
2006
Firstpage
79
Lastpage
82
Abstract
Giant magnetoresistance (GMR) of Co and Fe-Co based structures with Cu and Au spacers were e-beam evaporated onto Si wafers. The thickness of layers was obtained from the simulation of X-ray reflectivity spectra. The GMR ratio was between 3.3 and 5.6 %. The effect of strain upon samples was studied in a bending configuration. The different dependences of coercivity (Hc) vs. strain were found. For example, for sample with Co(5)/Au(2.2)/Co(2) core structure (where numbers denote thickness in nm) Hc increases with increasing compressive stress, whereas for sample with Co(0.5)/Cu(3)/Co(5) core structure it increases with tensile stress. The relative change of GMR ratio vs. loading in the strain interval plusmn 280times10-6 is 1-2 % near to the point of inflection of GMR vs. H curve (3.6 kA/m) for the second sample. The structures can be further optimized and applied in sensors of mechanical quantities
Keywords
"Capacitive sensors","Giant magnetoresistance","Magnetic field induced strain","Magnetostriction","Magnetic sensors","Magnetic separation","Tensile stress","Mechanical sensors","Magnetic field measurement","Strips"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331158
Filename
4133082
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