• DocumentCode
    3624487
  • Title

    Electron-electron Interaction Induced Parabolic Negative Magnetoresistance in Two-dimensional Electron Gas in InGaAs/InP

  • Author

    B. Podor;G. Remenyi

  • Author_Institution
    Budapest Tech, Kand? K?lm?n Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary
  • fYear
    2006
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    The authors have studied the parabolic negative magnetoresistance in modulation-doped In0.53Ga0.47As/InP heterostructures below 4.2 K temperature. It is shown that the observed negative magnetoresistance in the two-dimensional electron gas can be explained in terms of electron-electron interaction in two-dimension
  • Keywords
    "Charge carrier processes","Magnetoresistance","Electrons","Indium gallium arsenide","Indium phosphide","Conductivity","Particle scattering","Magnetic fields","Temperature measurement","Materials science and technology"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331167
  • Filename
    4133091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624487