DocumentCode :
3624487
Title :
Electron-electron Interaction Induced Parabolic Negative Magnetoresistance in Two-dimensional Electron Gas in InGaAs/InP
Author :
B. Podor;G. Remenyi
Author_Institution :
Budapest Tech, Kand? K?lm?n Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary
fYear :
2006
Firstpage :
113
Lastpage :
116
Abstract :
The authors have studied the parabolic negative magnetoresistance in modulation-doped In0.53Ga0.47As/InP heterostructures below 4.2 K temperature. It is shown that the observed negative magnetoresistance in the two-dimensional electron gas can be explained in terms of electron-electron interaction in two-dimension
Keywords :
"Charge carrier processes","Magnetoresistance","Electrons","Indium gallium arsenide","Indium phosphide","Conductivity","Particle scattering","Magnetic fields","Temperature measurement","Materials science and technology"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331167
Filename :
4133091
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3624487
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