• DocumentCode
    3624489
  • Title

    Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors

  • Author

    M. Florovic;J. Kovac;R. Srnanek;J. Jakabovic;J. Chovan;B. Sciana;D. Radziewicz;M. Tlaczala

  • Author_Institution
    Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia
  • fYear
    2006
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    The aim of this work is to point on the electrical and optical properties of interdigital MSM photodetectors containing Si delta-doped In0.22Ga0.78As/GaAs QW in dependence of different QW depth under UD GaAs cap layer. For this purposes the delta-doped structure was bevelled. The I-V characteristics in dark and under illumination as well as time response dependence on cap layer thickness were measured and evaluated
  • Keywords
    "Indium gallium arsenide","Gallium arsenide","Photodetectors","Voltage","Spectroscopy","Photoconductivity","Wavelength measurement","Dark current","Time factors","Time measurement"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331171
  • Filename
    4133095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624489