DocumentCode :
3624489
Title :
Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors
Author :
M. Florovic;J. Kovac;R. Srnanek;J. Jakabovic;J. Chovan;B. Sciana;D. Radziewicz;M. Tlaczala
Author_Institution :
Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia
fYear :
2006
Firstpage :
129
Lastpage :
132
Abstract :
The aim of this work is to point on the electrical and optical properties of interdigital MSM photodetectors containing Si delta-doped In0.22Ga0.78As/GaAs QW in dependence of different QW depth under UD GaAs cap layer. For this purposes the delta-doped structure was bevelled. The I-V characteristics in dark and under illumination as well as time response dependence on cap layer thickness were measured and evaluated
Keywords :
"Indium gallium arsenide","Gallium arsenide","Photodetectors","Voltage","Spectroscopy","Photoconductivity","Wavelength measurement","Dark current","Time factors","Time measurement"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331171
Filename :
4133095
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3624489
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