Title :
Nb-Ti/Al/Ni/Au Ohmic Metallic System to AlGaN/GaN
Author :
T. Lalinsky;G. Vanko;Z. Mozolova;J. Liday;P. Vogrincic;A. Vincze;F. Uherek;S. Hascik;I. Kostic
Author_Institution :
Institute of Electrical Engineering, Slovak Academy of Sciences, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia. e-mail: eleklali@savba.sk
Abstract :
In this paper, we report on novel Nb/Ti/Al/Ni/Au metallic system to form ohmic contact to AIGaN/GaN heterostructure. The fabrication and electrical characterization of the Nb-Ti/AI/Ni/Au based ohmic contacts are presented. Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) are also used to evaluate the improved ohmic contact formation
Keywords :
"Gold","Aluminum gallium nitride","Gallium nitride","Ohmic contacts","Niobium","Mass spectroscopy","Tin","Fabrication","Surface morphology","Electrons"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331176
