DocumentCode :
3624494
Title :
GaAs and GaN based SAW chemical sensors: acoustic part design and technology
Author :
L. Rufer;T. Lalinsky;D. Grobelny;S. Mir;G. Vanko;Zs. Oszi;Z. Mozolova;J. Gregus
Author_Institution :
TIMA Laboratory, 46 Av. F?lix Viallet, 38 031 Grenoble, France. e-mail: Libor.Rufer@imag.fr
fYear :
2006
Firstpage :
165
Lastpage :
168
Abstract :
In this paper, we present the design considerations and the technology process of SAW (surface acoustic wave) chemical sensors based either on GaAs or GaN structures. These sensors can be used for identifying environmental contaminants and chemical or biological agents in large applications scale; in this study, we aimed at the measurement of low concentrations of gaseous mercury. We describe the design of the acoustic part of the sensor including the structure for the generation and reception of the surface acoustic wave and the chemoselective coating made of gold. We show the technology process that achieves the device operating at the frequency of 250 MHz. Finally we present some preliminary results obtained from the device
Keywords :
"Gallium arsenide","Gallium nitride","Surface acoustic waves","Chemical sensors","Chemical technology","Chemical and biological sensors","Surface contamination","Acoustic waves","Biosensors","Acoustic sensors"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331180
Filename :
4133104
Link To Document :
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