• DocumentCode
    3624496
  • Title

    4H-SiC Diode with a RuOx and a RuWOx Schottky Contact Irradiated by Fast Electrons

  • Author

    L´. Stuchlikova;L. Harmatha;D. Buc;J. Benkovska;B. Hlinka;G. G. Siu

  • Author_Institution
    Department of Microelectronics, Faculty of Electrical Engineering and Information, Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia. e-mail: lubica.stuchlikova@stuba.sk
  • fYear
    2006
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    The impact of radiation damage on the device performance of 4H-SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 gy), is studied. No degradation is observed from measured capacitance-voltage curves. The radiation-induced decrease of the Schottky barrier height is observed from current-voltage measurements. Eight electron deep energy levels are observed before irradiation, and eighteen electron levels are induced after irradiation by a standard deep level transient spectroscopy
  • Keywords
    "Schottky diodes","Schottky barriers","Electrons","Temperature","Degradation","Capacitance measurement","Capacitance-voltage characteristics","Current measurement","Energy states","Spectroscopy"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331187
  • Filename
    4133111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624496