DocumentCode :
3624499
Title :
Changes of GaAs neutron detectors properties after fast neutron irradiation
Author :
Milan Ladziansky;Andrea Sagatova-Per´ochova;Bohumir Zat´ko;Vladimir Necas;Frantisek Dubecky
Author_Institution :
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, SK-812 19 Bratislava, Slovakia, e-mail: milan.ladziansky@stuba.sk
fYear :
2006
Firstpage :
217
Lastpage :
220
Abstract :
One of steps in the development of semi-insulating (SI) GaAs neutron detectors is study of radiation resistance to exposure of the detectors with high fluencies of neutrons (from 5 times 1011 n.cm-2 to 1 times 1015 n.cm-2). Changes in spectra of 241Am and 37 Co gamma radionuclide sources, measured by GaAs detectors exposed to various neutron fluencies, are observed. The energy resolution is improving with rising neutron fluency but charge collection efficiency decreased. It is probably caused by the impacting neutrons, which created new lattice defects in the material of detector. The newly created defects would partially compensate original defects, present in the material from the fabrication. However, at higher neutron fluencies a great degradation of detection performance of measured detectors occurred
Keywords :
"Neutrons","Gallium arsenide","Radiation detectors","Silicon radiation detectors","Gamma ray detection","Gamma ray detectors","Gas detectors","Energy resolution","Lattices","Fabrication"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331193
Filename :
4133117
Link To Document :
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