Investigation of GaN/ZnO heterostructures properties

The authors report on the fabrication and measurement of electrical and optical properties of GaN/ZnO heterostructures. The I-V characteristics of the fabricated diodes revealed the ohmic and rectifying behavior under different conditions of ZnO films deposition. The sputtered ZnO films on n type GaN shows ohmic character and are promising for the transparent contact formation. Formation of p-type ZnO film was find out from measured I-V characteristics of n GaN/ZnO heterostructures prepared by pulsed laser deposition and could be a promising for potential application in optoelectronic devices