• DocumentCode
    3624504
  • Title

    2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructure

  • Author

    J. Martaus;V. Cambel;R. Kudela;D. Gregusova;J. Soltys

  • Author_Institution
    Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovak Republic. e-mail: elekmajo@savba.sk
  • fYear
    2006
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    We have studied transport of a two-dimensional electron gas through a potential barrier prepared on shallow GaAs/AlxGa 1-xAs/InGaP heterostructure by local anodic oxidation (LAO) with an AFM tip. The potential barrier height after LAO was 55 meV, and it increased to 270 meV after oxide line removal at 300 mV, at room temperature. Barriers with this height can be used for room temperature nanometre-sized structures and devices fabrication
  • Keywords
    "Electrons","Gallium arsenide","Oxidation","Temperature","Nanostructures","Nanoscale devices","Atomic force microscopy","Voltage","Molecular beam epitaxial growth","Bars"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331201
  • Filename
    4133125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624504