MESFET Noise Model based on Three Equivalent Temperatures

A completed model for the prediction of MESFET noise parameters by using the standard microwave circuit simulator is proposed in this paper. Starting from the noise model with two noise sources and two corresponding equivalent temperatures, the correlation between the noise sources in the model is taken into account in a new way, by assigning an additional complex parameter named equivalent correlation temperature. A set of equation describing the noise parameters as the function of equivalent circuit elements as well as three equivalent temperatures is derived. The proposed procedure is implemented within the circuit simulator Libra and applied to a number of commercially available MESFETs. The simulated noise parameters agree very well with referent data.