DocumentCode :
3624662
Title :
Bias-Dependent Model of Microwave FET S-parameters Based on Prior Knowledge ANNs
Author :
Zlatica D. Marinkovic;Olivera R. Pronic;Vera V. Markovic
Author_Institution :
Student Member, IEEE, Faculty of Electronic Engineering, University of Ni?, Aleksandra Medvedeva 14, 18000 Ni?, Serbia, phone +381-18-529-303
fYear :
2006
Firstpage :
185
Lastpage :
188
Abstract :
The applications of artificial neural networks (ANNs) in bias-dependent modeling of S-parameters of microwave FETs have been proposed earlier. Here, a model based on an ANN with additional prior knowledge at its inputs (PKI ANN) is introduced. S-parameters of the device that belongs to the same class as the modeled device are used as the prior knowledge. The PKI concept allows ANN model to be developed with less training data, which is very advantageous when training data is expensive or time consuming to obtain. The proposed modeling concept is illustrated by an appropriate modeling example
Keywords :
"Microwave FETs","Scattering parameters","Artificial neural networks","Microwave devices","HEMTs","Equivalent circuits","Training data","Electromagnetic modeling","MODFETs","Microwave transistors"
Publisher :
ieee
Conference_Titel :
Neural Network Applications in Electrical Engineering, 2006. NEUREL 2006. 8th Seminar on
Print_ISBN :
1-4244-0432-0
Type :
conf
DOI :
10.1109/NEUREL.2006.341208
Filename :
4147196
Link To Document :
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