Modelling of Dynamic Temperature States in Layer Microelectronics Systems

The theoretical analysis (compared with experimental investigations) of dynamic temperature states in layer microcircuits (made in LTCC or HTCC technology) has been described in the paper. Two basic models and solution procedures of analytical equations system have been presented. Furthermore their basic advantages and disadvantages have been compared together with accuracy discussion. The solution of the analytical model (for the typical thick-film structure - active layer placed on alumina substrate) has been compared with the experimental results. The many factors which have influence on accuracy of obtained results have been taken into consideration and discussed. The results of analysis can be used in researches with reliability and tolerance aspect of microsystems (intensity of degradation processes) as well as in determination of thermal properties of the designed systems.