Low-Power Low-Noise Neural Amplifier in 0.18μm FD-SOI Technology

For recording of neural signals from large population of neurons, stringent constraints are imposed on the design of neural amplifiers. We have designed neural amplifier in FD-SOI technology in order to achieve lower power consumption, smaller area, and better noise efficiency factor compared to the standard bulk processes. A symmetric pseudo resistor was realized with resistances on the order of 10¹⁵Ω, enabling a low cut-off frequency of 0.6mHz. The designed neural amplifier occupies an area of 0.004mm², with simulated performance demonstrating an input-referred noise of 3.07μV_rms and a power consumption of 6μW.