Facet Heating Mechanisms in High Power Semiconductor Lasers Investigated by Spatially Resolved Thermoreflectance

Author

D. Pierscinska;K. Pierscinski;A. Kozlowska;A. Malag;A. Jasik;M. Bugajski

Author_Institution

Department of Physics and Technology of Low Dimensional Structures, Institute of Electron Technology, Warsaw, Al. Lotnik?w 32/46, 02-668, Poland. e-mail: dwawer@ite.waw.pl

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

506

Lastpage

510

Abstract

Thermal properties, degradation behaviour and optical and current contributions to facet heating of high power diode lasers emitting at 808 nm are analysed. The investigated devices with non-injected facets are designed to reduce carrier recombination at the facet surface. Spatially resolved thermoreflectance spectroscopy is used to measure temperature distribution maps over the laser facet. This study compares the facet temperature distributions for fresh (undamaged) and degraded laser. The measurements results indicate for the strong contribution of reabsorption of the laser emission to the overall facet heating for lasers with non-injected facets.

Keywords

"Heating","Power lasers","Semiconductor lasers","Spatial resolution","Thermoreflectance","Surface emitting lasers","Temperature distribution","Thermal degradation","Stimulated emission","Diode lasers"

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2007. MIXDES ´07. 14th International Conference on

Print_ISBN

83-922632-4-3

Type

conf

DOI

10.1109/MIXDES.2007.4286215

Filename

4286215