Design issues of 1.55 μm emitting GaInNAs quantum dots

We present a theoretical study of the optical properties of GalnNAs quantum dot (QD) structures, emitting at 1.55 μm wavelength. The theoretical model is based on a 10 x 10 k.p band-anti-crossing Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We have investigated the interplay between the nitrogen to the conduction band mixing, and piezoelectric field on the ground state optical matrix element. With a reduced amount of indium and an increased amount of nitrogen in the QD the optical matrix element becomes on the average larger and less sensitive to the variation of both the QD shape and size than is the case of an InNAs QD. The ideal optical characteristics at room temperature and 1.55 μm wavelength are discussed.