Influence of Medium Dose Rate X and Gamma Radiation and Bias Conditions on Characteristics of Low-Dropout Voltage Regulators with Lateral and Vertical Serial PNP Transistors

Voltage regulators were exposed to the influence of medium dose rate X and gamma radiation, in two modes: without bias, and with bias and load Examined integrated circuits are representatives of low-dropout voltage regulators with lateral and vertical PNP transistor: LM2940 and L4940. Results of the experiment, including the change of serial transistor dropout voltage and maximum output current as a function of total ionizing dose of X and gamma radiation, were presented for Commercial-Off-The-Shelf lC´s from two batches of each manufacturer.