Title :
Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures
Author :
Carlin, C. Zachary ; Bradshaw, Geoffrey K. ; Samberg, Joshua P. ; Colter, Peter C. ; Bedair, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is observed that the spectral response depends critically upon the width of the GaAsP barriers and the device polarity. Electron tunneling is not as efficient as hole tunneling due to a higher conduction band barrier. The spectral response depends on the relative magnitude of the carrier lifetime as compared with the tunneling lifetime. This paper deduces an estimated electron lifetime of 110 ns in In0.14Ga0.86As wells and 25 ns in In0.17Ga0.83As wells, which agree with published results.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; semiconductor quantum wells; tunnelling; InGaAs-GaAsP; conduction band barrier; device polarity; electron tunneling; hole tunneling; lifetime; minority carrier transport; multiple quantum well structures; n-i-p solar cell structures; p-i-n solar cell structures; Absorption; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum well devices; Radiative recombination; Tunneling; Indium Gallium Arsenide; quantum wells; tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2268421