• DocumentCode
    3626708
  • Title

    Designing HV active clamps for HBM robustness

  • Author

    Guido Notermans;Olivier Quittard;Anco Heringa;Zeljko Mrcarica;Fabrice Blanc;Hans van Zwol;Theo Smedes;Thomas Keller;Peter de Jong

  • Author_Institution
    NXP Semiconductors, Binzstr. 38, CH-8045 Zurich, Switzerland
  • fYear
    2007
  • Abstract
    Electrical measurements, physical damage analysis, and device simulation have proved that the drain junction breakdown voltage is the determining failure criterion for our HV active clamps. Using this criterion, the HBM and TLP robustness of such clamps can be accurately predicted by circuit simulation without the need for test silicon.
  • Keywords
    "Clamps","Robustness","Failure analysis","Circuit testing","Electrostatic discharge","Circuit simulation","Protection","Analytical models","Pulse circuits","Switches"
  • Publisher
    ieee
  • Conference_Titel
    29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
  • Print_ISBN
    978-1-58537-136-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2007.4401730
  • Filename
    4401730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3626708