Title :
DC characteristics of the SiC MESFETs
Author :
Janusz Zarebski;Damian Bisewski
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics, Morska 83, 81-225 Gdynia, Poland, E-mail: zarebski@am.gdynia.pl
Abstract :
In the paper the dc characteristics of the SiC MESFET operating in the wide temperature range are investigated. The transistor CRF24010 offered by Cree is considered. The characteristics obtained from measurements and SPICE simulations performed with the use of Raytheon-Statz model are compared.
Keywords :
"Silicon carbide","Temperature dependence","Gallium arsenide","SPICE","Voltage-controlled oscillators","Voltage","Temperature distribution","Performance evaluation","MESFET circuits","Transconductance"
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
Print_ISBN :
966-553-507-2
DOI :
10.1109/TCSET.2006.4404453
