• DocumentCode
    3626751
  • Title

    DC characteristics of the SiC MESFETs

  • Author

    Janusz Zarebski;Damian Bisewski

  • Author_Institution
    Gdynia Maritime University, Department of Marine Electronics, Morska 83, 81-225 Gdynia, Poland, E-mail: zarebski@am.gdynia.pl
  • fYear
    2006
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    In the paper the dc characteristics of the SiC MESFET operating in the wide temperature range are investigated. The transistor CRF24010 offered by Cree is considered. The characteristics obtained from measurements and SPICE simulations performed with the use of Raytheon-Statz model are compared.
  • Keywords
    "Silicon carbide","Temperature dependence","Gallium arsenide","SPICE","Voltage-controlled oscillators","Voltage","Temperature distribution","Performance evaluation","MESFET circuits","Transconductance"
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
  • Print_ISBN
    966-553-507-2
  • Type

    conf

  • DOI
    10.1109/TCSET.2006.4404453
  • Filename
    4404453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3626751