• DocumentCode
    3626755
  • Title

    ON-Resistance of Power MOSFETs

  • Author

    Janusz Zarebski;Rafal Zarebski

  • Author_Institution
    Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225 Gdynia, POLAND. E-mail: zarebski@am.gdynia.pl
  • fYear
    2006
  • Firstpage
    145
  • Lastpage
    147
  • Abstract
    This paper deals with modelling of the drain-to-source ON-Resistance (Ron) of power MOSFETs. Two kinds of the transistor structures: VDMOS and CoolMOS made of a silicon and a silicon-carbide are considered in the paper.
  • Keywords
    "MOSFETs","Transistors","Silicon carbide","Epitaxial layers","Doping","Electron mobility","Permittivity","Voltage","Electric resistance","Chromium"
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
  • Print_ISBN
    966-553-507-2
  • Type

    conf

  • DOI
    10.1109/TCSET.2006.4404476
  • Filename
    4404476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3626755