Title :
Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs
Author :
A. Sevcenco;G. Brezeanu;M. Badila;F. Draghici;I. Rusu;A. Visoreanu
Author_Institution :
University Politehnica Bucharest, Romania
Abstract :
The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.
Keywords :
"Analytical models","MOSFETs","Voltage","Semiconductor device modeling","Geometry","Electric variables","CMOS process","Electronic mail","Predictive models","Transconductance"
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Print_ISBN :
978-1-4244-0847-4
Electronic_ISBN :
2377-0678
DOI :
10.1109/SMICND.2007.4519783
