Title :
Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs
Author :
N. Zanolla;D. Siprak;P. Baumgartner;E. Sangiorgi;C. Fiegna
Author_Institution :
ARCES-DEIS Univ. Bologna & IU.NET, Cesena Lab., Via Venezia 52, 47023, Italy
Abstract :
Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.
Keywords :
"Time measurement","Voltage","MOSFETs","Electron traps","Telegraphy","CMOS technology","Fluctuations","Low-frequency noise","Cutoff frequency","Tunneling"
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Print_ISBN :
978-1-4244-1729-2
DOI :
10.1109/ULIS.2008.4527158
