• DocumentCode
    3627925
  • Title

    Innovative High Voltage transistors for complex HV/RF SoCs in baseline CMOS

  • Author

    J. Sonsky;A. Heringa;J. Perez-Gonzalez;J. Benson;P.Y. Chiang;S. Bardy;I. Volokhine

  • Author_Institution
    NXP-TSMC Research Center, Kapeldreef 75, Leuven, Belgium. jan.sonsky@nxp.com
  • fYear
    2008
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    Trends in portable applications lead to integration of power management, power amplification and RF functionality in a single chip using the most advanced CMOS technology. The required HV transistors should be strictly realized in baseline CMOS to guarantee cost competitiveness and short time-to-market. This paper advocates innovative transistor architectures based on smart layout to address this challenge in both bulk and PD-SOI sub-100 nm CMOS.
  • Keywords
    "Voltage","Radio frequency","CMOS technology","MOSFETs","Transistors","Fingers","CMOS process","Space technology","Energy management","Costs"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530823
  • Filename
    4530823