Title :
Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology
Author :
Lis K. Nanver;Francesco Sarubbi;Viktor Gonda;Milos Popadic;Tom L.M. Scholtes;Wiebe de Boer;Koen Buisman
Author_Institution :
Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Feldmannweg 17, 2628 CT, The Netherland
Abstract :
A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemicalvapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p+n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.
Keywords :
"Radio frequency","Chemical technology","Chemical lasers","Chemical vapor deposition","Doping profiles","Varactors","Optical control","Boron","Diodes","Annealing"
Conference_Titel :
Junction Technology, 2008. IWJT ´08. Extended Abstracts - 2008 8th International workshop on
Print_ISBN :
978-1-4244-1737-7
DOI :
10.1109/IWJT.2008.4540027
