DocumentCode :
36281
Title :
Theory and Design Optimization of Energy-Efficient Hydrophobic Wafer-bonded III–V/Si Hybrid Semiconductor Optical Amplifiers
Author :
Cheung, Stephane ; Kawakita, Y. ; Kuanping Shang ; Yoo, S.J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, Davis, CA, USA
Volume :
31
Issue :
24
fYear :
2013
fDate :
Dec.15, 2013
Firstpage :
4057
Lastpage :
4066
Abstract :
This paper discusses optimum design strategies for high-efficiency hybrid semiconductor optical amplifiers (SOA). A comprehensive model is presented to determine the width, composition, and number of quantum wells for a hydrophobic bonded SOA with In s-x-y)Ga (x)Al (y) As quantum-wells (QW). Optimizing the interfacial bonding layer, III-V wafer stack design, straight hybrid amplifier dimensions and flared amplifier configurations leads to a design for up to 35% wall-plug efficiency at 2 mW input and 10 dB gain. Likewise, optimized dimensions also lead to 15% wall-plug efficiency (WPE) at 0.1 mW input and 10 dB gain. Thermal effects due to the effect of the buried oxide layer (BOX) is presented and methods of improved thermal extraction is discussed.
Keywords :
semiconductor optical amplifiers; semiconductor quantum wells; buried oxide layer; design optimization; energy-efficient hydrophobic wafer; hybrid amplifier dimensions; hybrid semiconductor optical amplifiers; interfacial bonding layer; quantum wells; thermal extraction; wall-plug efficiency; Bonding; Indium phosphide; Mathematical model; Semiconductor optical amplifiers; Silicon; Strain; Data centers; integrated optical devices; optical amplifiers; optical interconnects;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2013.2284287
Filename :
6617669
Link To Document :
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