Title :
Non-isothermal characteristics of SiC power Schottky diodes
Author :
J. Zarebski;J. Dabrowski
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225, (Poland)
Abstract :
In the paper the problem of modelling d.c. characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky diode.
Keywords :
"Schottky diodes","Temperature measurement","Silicon carbide","Voltage measurement","Current measurement","Thermal resistance","Resistance"
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
Print_ISBN :
978-1-4244-1663-9
DOI :
10.1109/SPEEDHAM.2008.4581136
