• DocumentCode
    3628932
  • Title

    2-μm InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

  • Author

    Nathan J. Withers; Hongjun Cao;Gennady A. Smolyakov;Ron Kaspi;Marek Osinski

  • Author_Institution
    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, 87106-4343 USA
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.
  • Keywords
    "Light emitting diodes","Current measurement","Metals","Molecular beam epitaxial growth","Fabrication","Optical device fabrication","Gallium"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Electronic_ISBN
    2160-9004
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628797
  • Filename
    4628797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3628932