Title :
A 65-W high-efficiency UHF GaN power amplifier
Author :
Nestor D. Lopez;John Hoversten;Matthew Poulton;Zoya Popovic
Author_Institution :
Department of Electrical and Computer Engineering, University of Colorado, Boulder, 80309, USA
Abstract :
This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V and 28 V, respectively. Load pull techniques under Class-E conditions are used for device characterization and matching network design. The PA is implemented in a hybrid circuit with mixed lumped-element and transmission-line matching networks. A weighted Euclidean distance is defined to enable tradeoff studies between output power (POUT) and efficiency, in order to find the final optimal amplifier design.
Keywords :
"Power amplifiers","Power generation","Transistors","Gallium nitride","Impedance","HEMTs","Microwave amplifiers"
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Print_ISBN :
978-1-4244-1780-3
DOI :
10.1109/MWSYM.2008.4633104
