SiC Schottky power diode modelling in SPICE

This paper concerns the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (selfheating) taken into account. Since April 2001 the SiC Schottky diodes made by Infineon Technologies have been commercially attainable. In the paper the SPICE electrothermal (including selfheating) macromodel of Infineon Technologies SiC Schottky diode is presented and detaily investigated. The considered macromodel has been verified experimentally. The silicon-carbide SDP04S60 rectifier has been tested. The nonisothermal characteristics obtained from measurements and SPICE calculations of SDP04S60 diode are compared. Due to the unacceptably large differences between measurements and calculations, some modifications of the macromodel have been proposed.