DocumentCode
3629618
Title
Characterization of MagFET structures
Author
Martin Daricek;Martin Donoval;Alexander Satka;Tomas Kosik
Author_Institution
Slovak University of Technology in Bratislava, Department of Microelectronics, Ilkovi?ova 3, Slovakia
fYear
2008
Firstpage
1233
Lastpage
1236
Abstract
The paper deals with characterization of various MagFET structures in alternating magnetic field in frequency range from 10 Hz to 10 kHz. 3D numerical simulation of MagFET structures has been used to investigate influence of MagFET geometry to the magnetic field sensitivity. Rectangle shaped structures of various dimensions were fabricated in standard 1mum two metal CMOS technology. MagFET devices were characterized for applications as a sensor of external magnetic fields and also as a current monitor. The measurement results show dependence of MagFETs sensitivity on structure geometry, channel type and biasing conditions.
Keywords
"Magnetic sensors","Magnetic fields","CMOS technology","Intelligent sensors","Geometry","Magnetic field measurement","Sensor phenomena and characterization","FETs","Energy consumption","Sensor systems and applications"
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Print_ISBN
978-1-4244-2181-7
Type
conf
DOI
10.1109/ICECS.2008.4675082
Filename
4675082
Link To Document