Voltage - Current Converter for a Memory Current Cell using Floating Gate transistors

This paper presents the analysis, design and implementation of a Voltage - Current Converter (VIC), for a Memory Current Cell (MIC) in a sample and hold process using Floating Gate MOS transistors and fabricated in 1.2 μm CMOS technology. The mathematical analysis of each cell is focused in show the advantages the floating gate transistor has versus conventional MOS transistor. Also, the cells are design taking into account low supply voltage and consequently, low power dissipation. We demonstrate the analytical results are according to simulation results. Both cells present good performance and linearity with a supply voltage of 1.7 V and tens of microwatts power consumption, despite the long channel technology. These characteristics are very important in analog and mixed signal applications, like mobile communications systems.