DocumentCode
3630130
Title
The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias
Author
Nicola Zanolla;Domagoj Siprak;Marc Tiebout;Peter Baumgartner;Enrico Sangiorgi;Claudio Fiegna
Author_Institution
ARCES - DEIS, University of Bologna & IU.NET, Via Venezia 52, 47023 Cesena, Italy
fYear
2008
Firstpage
80
Lastpage
83
Abstract
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments.
Keywords
"1f noise","Low-frequency noise","Noise reduction","Noise figure","Dielectrics","Paper technology","Frequency","MOSFET circuits","CMOS technology","Telegraphy"
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Print_ISBN
978-1-4244-2185-5
Type
conf
DOI
10.1109/ICSICT.2008.4734476
Filename
4734476
Link To Document