DocumentCode :
3630214
Title :
OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor
Author :
S. Hasenohrl;M. Kucera;M. Morvic;J. Novak
Author_Institution :
Institute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia. e-mail: Stanislav.Hasenohrl@savba.sk
fYear :
2008
Firstpage :
111
Lastpage :
114
Abstract :
A set of Ga1-xMnxAs epitaxial layers with variable Mn content xMn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of xMn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2?1018 cm-3. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1?1020 cm-3.
Keywords :
"Magnetic semiconductors","Gallium arsenide","Saturation magnetization","Manganese alloys","Magnetic materials","Electric variables measurement","Epitaxial layers","Inductors","Optical saturation","Solids"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Print_ISBN :
978-1-4244-2325-5
Type :
conf
DOI :
10.1109/ASDAM.2008.4743293
Filename :
4743293
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3630214
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