DocumentCode :
3630215
Title :
Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions
Author :
Zs. J. Horvath;V. Rakovics;B. Podor
Author_Institution :
Hungarian Academy of Sciences Research Institute for Technical Physics and Materials Science, Budapest 114, P.O. Box 49., H-1525 Hungary
fYear :
2008
Firstpage :
119
Lastpage :
122
Abstract :
Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.
Keywords :
"Gold","Temperature","Substrates","Schottky barriers","Ohmic contacts","Lattices","Epitaxial layers","Etching","Materials science and technology","Tellurium"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Print_ISBN :
978-1-4244-2325-5
Type :
conf
DOI :
10.1109/ASDAM.2008.4743295
Filename :
4743295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3630215
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