Title :
Low equivalent oxide thickness metal/insulator/metal structures for DRAM application
Author :
B. Hudec;M. Tapajna;K. Husekova;J. Aarik;A. Aidla;K. Frohlich
Author_Institution :
Institute of Electrical Engineering, SAS, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia
Abstract :
We have prepared metal/insulator/metal (MIM) structures with RuO2 bottom electrode and TiO2 dielectric film for advanced dynamic random access memory (DRAM) technology. RuO2 films were grown by metal organic chemical vapour deposition while TiO2 films were prepared by atomic layer deposition. RuO2 bottom electrode crystallizes in rutile structure and induces growth of rutile TiO2. Equivalent oxide thickness (EOT) as low as 0.39 nm and dielectric constant as high as 130 was obtained. It was found that leakage current strongly depends on either oxygen treatment after deposition or its admixture to the carrier gas during TiO2 deposition. However, MIM structures under study show higher leakage current that is expected for the application (~10-7 A/cm2) in DRAM technology.
Keywords :
"Metal-insulator structures","Random access memory","Dielectrics and electrical insulation","Electrodes","Leakage current","Dielectric films","DRAM chips","Chemical technology","Organic chemicals","Chemical vapor deposition"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Print_ISBN :
978-1-4244-2325-5
DOI :
10.1109/ASDAM.2008.4743296