Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique

Deep level transient spectroscopy (DLTS) measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. The main purpose of the experiments was to test our theory concerning the possibility of unambiguous interpretation of the DLTS spectrum. A simple method of correct assignment of the observed traps to either side of the junction is outlined. Using this method based on the dependence of normalized DLTS peak amplitude on the reverse bias, two electron traps and two hole traps were recognized in tested samples. At least three of these traps are probably related to quenched-in defects.