InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer

The paper reports on a study of MOVPE growth of InMnAs dots on patterned GaAs substrates. The substrates contained [0 1 1]-oriented mesas (of trapezoidal cross-section) and ridges (of triangular cross-section) confined to facets either close to {311}A and or close to {211}A crystallographic planes. MOVPE proved to be very useful for a controlled preparation of InMnAs dots on such substrates. The analysis showed that almost no dots were grown on (100)-related strips that formed during growth by self-faceting on tops of the triangular ridges. Densities of the InMnAs dots on the {311}A-or {211}A-related facets were about 5-7 times lower compared with those on reference planar (100) substrates. On the average, the dots on the facets were larger than those formed on the reference substrates. The lateral size of the dots varied between 100 and 180 nm.