Title :
High Frequency Characterization and Properties of AlGaN/GaN HEMT Structures
Author :
M. Tomaska;T. Lalinsky;G. Vanko;M. Misun
Author_Institution :
Dept. of Microelectronics, Slovak University of Technology, Ilkovi?ova 3, 81219 Bratislava, Slovak Republic. e-mail: tomaska@elf.stuba.sk
Abstract :
The paper reports microwave properties of AlGaN/GaN HEMT fabricated on sapphire substrate. The measured transition frequency as well as maximum frequency of oscillation was taken as a figure of merit for comparison of influence of different treatment. Using 2 mum length of gate electrode 7.425 GHz transition frequency as well as 23.437 GHz maximum frequency of oscillation was achieved. Significant influence of surface plasma treatment on HEMT microwave properties was found.
Keywords :
"Frequency","Aluminum gallium nitride","Gallium nitride","HEMTs","Plasma measurements","Plasma density","Surface treatment","Plasma properties","Electron mobility","Plasma applications"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Print_ISBN :
978-1-4244-2325-5
DOI :
10.1109/ASDAM.2008.4743351
