Title :
InAIN/GaN MOSHEMT with Al2O3 insulating film
Author :
K. Cico;D. Gregusova;J. Kuzmik;M. A. di Forte-Poisson;T. Lalinsky;D. Pogany;S. L. Delage;K. Frohlich
Author_Institution :
Institute of Electrical Engineering, Centre of Excellence CENG, Slovak Academy of Sciences, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia. e-mail: karol.cico@savba.sk
Abstract :
In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of the leakage current was about 7 orders of magnitude compared with HEMT structures without the insulating film.
Keywords :
"Gallium nitride","HEMTs","Dielectrics and electrical insulation","Rapid thermal annealing","Pulse measurements","Leakage current","Threshold voltage","Thermal stability","Temperature","MODFETs"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Print_ISBN :
978-1-4244-2325-5
DOI :
10.1109/ASDAM.2008.4743365
